參數(shù)資料
型號(hào): 2N6050
廠商: 意法半導(dǎo)體
英文描述: Silicon PNP Power Darlington Transistor(硅PNP功率達(dá)林頓晶體管)
中文描述: 硅PNP功率達(dá)林頓晶體管(硅進(jìn)步黨功率達(dá)林頓晶體管)
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 65K
代理商: 2N6050
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
0.1
0.5
mA
mA
I
CBO
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
V
BE
Base-Emitter Voltage
h
FE
DC Current Gain
V
CE
= rated V
CBO
0.1
mA
I
CEO
V
CE
= rated V
CEO
0.1
mA
I
EBO
V
EB
= 5 V
2
mA
I
C
= 100 mA
80
V
I
C
= 2 A I
B
= 8 mA
I
C
= 4 A I
B
= 40 mA
I
C
= 4 A I
B
= 40 mA
2
3
V
V
4
V
I
C
= 2 A V
CE
= 3 V
2.8
V
I
C
= 0.5 A V
CE
= 3 V
I
C
= 2 A V
CE
= 3 V
I
C
= 4 A V
CE
= 3 V
500
750
100
15000
h
fe
Small Signal Current
Gain
Collector Base
Capacitance
I
C
= 0.75 A V
CE
= 10 V f = 1KHz
25
C
CBO
I
E
= 0 V
CB
= 10 V f = 1MHz
for
NPN types
for
PNP types
100
200
pF
pF
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
2N6050
2/4
相關(guān)PDF資料
PDF描述
2N6050 POWER TRANSISTORS(12A,150W)
2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR
2N6050 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
2N6051 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
2N6052 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
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