參數(shù)資料
型號(hào): DAC1405D650HW
廠商: NXP Semiconductors N.V.
元件分類: 外設(shè)及接口
英文描述: Dual 14-bit DAC, up to 650 Msps; 2x 4x and 8x interpolating
封裝: DAC1405D650HW/C1<SOT638-1 (HTQFP100)|<<http://www.nxp.com/packages/SOT638-1.html<1<Always Pb-free,;DAC1405D650HW/C1<SOT638-1 (HTQFP100)|<<http://www.nxp.com/packages/SOT6
文件頁數(shù): 12/45頁
文件大小: 1033K
代理商: DAC1405D650HW
DAC1405D650
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 10 September 2010
12 of 45
NXP Semiconductors
DAC1405D650
Dual 14-bit DAC, up to 650 Msps; 2
×
, 4
×
and 8
×
interpolating
[1]
D = guaranteed by design; C = guaranteed by characterization; I = 100 % industrially tested.
[2]
CLKP and CLKN inputs are at differential LVDS levels. An external differential resistor with a value of between 80
Ω
and 120
Ω
should
be connected across the pins (see
Figure 8
).
[3]
|
V
gpd
|
represents the ground potential difference voltage. This is the voltage that results from current flowing through the finite resistance
and the inductance between the receiver and the driver circuit ground voltages.
[4]
IMD3 rejection with
6 dBFS/tone.
IMD3
third-order
intermodulation
distortion
f
o1
= 49 MHz; f
o2
= 51 MHz;
fs = 320 Msps; 4
×
interpolation
f
o1
= 95 MHz; f
o2
= 97 MHz;
fs = 320 Msps; 4
×
interpolation
f
o1
= 95 MHz; f
o2
= 97 MHz;
fs = 640 Msps; 8
×
interpolation
f
o1
= 152 MHz; f
o2
= 154 MHz;
fs = 640 Msps; 8
×
interpolation
f
data
= 76.8 MHz; f
s
= 614.4 Msps; f
o
= 96 MHz
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
f
data
= 153.6 MHz; f
s
= 614.4 Msps; f
o
= 115.2 MHz
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
f
data
= 153.6 MHz; f
s
= 614.4 Msps; f
o
= 153.6 MHz
1 carrier; BW = 5 MHz
2 carriers; BW = 10 MHz
4 carriers; BW = 20 MHz
f
s
= 640 Msps; 8
×
interpolation; f
o
= 19 MHz at 0 dBFS
noise shaper disable
noise shaper enable
C
[4]
-
82
-
dBc
C
[4]
-
80
-
dBc
I
[4]
67
80
-
dBc
C
[4]
-
77
-
dBc
ACPR
adjacent channel power
ratio
I
C
C
-
-
-
72
71
69
-
-
-
dB
dB
dB
C
C
C
-
-
-
70
70
67
-
-
-
dB
dB
dB
C
C
C
-
-
-
69
69
66
-
-
-
dB
dB
dB
NSD
noise spectral density
C
C
-
-
154
157
-
-
dBm/Hz
dBm/Hz
Table 5.
V
DDA(1V8)
= V
DDD(1V8)
= 1.8 V; V
DDA(3V3)
= V
DD(IO)(3V3)
= 3.3 V; AGND, DGND and GNDIO shorted together; T
amb
=
40
°
C to
+85
°
C; typical values measured at T
amb
= 25
°
C; R
L
= 50
Ω
; I
O(fs)
= 20 mA; maximum sample rate; PLL on unless otherwise
specified.
Symbol
Parameter
Conditions
Characteristics
…continued
Test
[1]
Min
Typ
Max
Unit
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