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參數(shù)資料
| 型號： | CY7C1041D-10ZSXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 206K |
| 代理商： | CY7C1041D-10ZSXC |
CY7C1041D
PRELIMINARY
Document #: 38-05472 Rev. *B
Page 3 of 9
AC Test Loads and Waveforms
[4]
Switching Characteristics
[5]
Over the Operating Range
7C1041D-10
Min.
7C1041D-12
Min.
7C1041D-15
Min.
Parameter
Read Cycle
t
power
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE
t
HZBE
Notes:
4. AC characteristics (except High-Z) for 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load
shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (c)
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
6. t
POWER
gives the minimum amount of time that the power supply should be at typical V
values until the first memory access can be performed.
7. t
, t
, t
, and t
are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured
±
200 mV from steady-state voltage.
8. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, t
HZBE
is less than t
LZBE,
and t
HZWE
is less than t
LZWE
for any given device.
Description
Max.
Max.
Max.
Unit
V
CC
(typical) to the First Access
[6]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
[7, 8]
CE LOW to Low Z
[8]
CE HIGH to High Z
[7, 8]
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
100
10
100
12
100
15
μ
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
12
15
3
3
3
10
5
12
6
15
7
0
0
0
5
6
7
3
3
3
5
6
7
0
0
0
10
5
12
6
15
7
0
0
0
5
6
7
1041D–3
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(b)
(c)
≤
3 ns
≤
3 ns
OUTPUT
R1 481
R1 481
R2
255
R2
255
167
Equivalent to:
VENIN EQUIVALENT
THé
1.73V
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
30 pF*
OUTPUT
Z = 50
50
1.5V
(a)
10-ns Device
12, 15-ns Devices
High-Z Characteristics
:
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1041D10ZSXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041D-10ZSXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M FAST ASYNC HI SPD IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1041D-10ZSXIT | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M FAST ASYNC HI SPD IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1041D-2XWI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041DV33-10BVI | 功能描述:靜態(tài)隨機(jī)存取存儲器 4M FAST ASYNC HI SPD IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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