參數(shù)資料
型號: CRCW12061021F100
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifiers
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 9/16頁
文件大?。?/td> 596K
代理商: CRCW12061021F100
MW4IC001NR4 MW4IC001MR4
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 2170 MHz
2170
32
IRL
G
ps
IMD
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus
Frequency
V
DD
= 28 Vdc
P
out
= 0.9 W (PEP)
I
DQ
= 12 mA
TwoTone Measurement,
100 kHz Tone Spacing
27
22
17
12
2160
2150
2140
2130
2120
2110
28
13
18
23
33
η
D
0.1
60
G
ps
P
out
, OUTPUT POWER (WATTS) PEP
Figure 18. CW Performance versus Output
Power
Gp
V
DD
= 28 Vdc
I
DQ
= 12mA
f = 2170 MHz
50
40
30
20
10
0
13.8
13.4
13.0
12.6
12.2
11.8
11.4
0.2 0.3 0.4 0.5 0.6 0.7 0.8
1.0 1.1 1.2 1.3 1.4 1.5
0.9
1
20
0.01
P
out
, OUTPUT POWER (WATTS) PEP
Figure 19. Intermodulation Distortion versus
Output Power
I
I
25
30
35
40
45
50
0.1
I
DQ
= 7.2 mA
12 mA
V
DD
= 28 Vdc
f1 = 2170 MHz, f2 = 2170.1 MHz
TwoTone Measurement
100 kHz Tone Spacing
20 mA
9.6 mA
16 mA
20
P
out
, OUTPUT POWER (WATTS) PEP
Figure 20. Intermodulation Distortion
Products versus Output Power
I
I
V
DD
= 28 Vdc, I
DQ
= 12 mA,
f1 = 2170 MHz, f2 = 2170.1 MHz
TwoTone Measurement, 100 kHz Tone Spacing
5th Order
3rd Order
7th Order
25
35
30
45
40
50
55
60
65
70
0.01
0.1
1
1
20
0.01
1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 21. Third Order Intermodulation
Distortion versus Output Power
100 kHz
10 MHz
V
DD
= 28 Vdc
I
DQ
= 12 mA
f1 = 2170 MHz
f2 = f1 + Tone Spacing
TwoTone Measurement
25
30
35
40
45
0.1
I
I
I
I
I
P1dB
η
D
,
η
D
η
D
,
p
,
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