參數(shù)資料
型號： CRCW12061021F100
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： RF LDMOS Wideband Integrated Power Amplifiers
中文描述： 射頻LDMOS寬帶集成功率放大器
文件頁數(shù)： 2/16頁
文件大小： 596K
代理商： CRCW12061021F100
2
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50
μ
A)
V
GS(th)
2
3
5
Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 10 mA)
V
GS(Q)
2
3.7
5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 V, I
D
= 0.05 A)
V
DS(on)
—
0.48
0.9
Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 0.1 A)
g
fs
—
0.05
—
S
Dynamic Characteristics
Output Capacitance
(V
DS
= 28
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
45
—
pF
Reverse Transfer Capacitance
(V
DS
= 28
Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
0.62
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two-Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
G
ps
—
13
—
dB
Two-Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
η
D
—
29
—
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IMD
—
- 28
—
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W PEP, I
DQ
= 12 mA,
f = 2170 MHz, Tone Spacing = 100 kHz)
IRL
—
-18
—
dB
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 12 mA, f = 2170 MHz)
P1dB
—
0.85
—
W
Common-Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
G
ps
12
13
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
η
D
35
38
—
%
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 0.9 W CW, I
DQ
= 12 mA, f = 2170 MHz)
IRL
-10
-16
—
dB
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