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參數(shù)資料
| 型號： | C3013 |
| 廠商： | IMP INC. |
| 英文描述： | CMOS 3mm 10 Volt Single Metal Analog |
| 中文描述： | 3毫米10伏的CMOS單金屬模擬 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 26K |
| 代理商： | C3013 |
86
C3013-4-98
Process C3013
Physical Characteristics
N <100>
N+/P+ Width/Space
15 - 25
-cm
N+ To P+ Space
5V
Contact To Poly Space
P-well
Contact Overlap Of Diffusion
1
Contact Overlap Of Poly
2
Metal-1 Overlap Of Contact
2.0x2.0
μ
m
Minimum Pad Opening
3.5 / 2.5
μ
m
Minimum Pad-to-Pad Spacing
4.0 / 2.5
μ
m
Minimum Pad Pitch
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Metal-1 Width/Space
Gate Poly Width/Space
3.0 / 3.0
μ
m
12
μ
m
2.5
μ
m
1.5
μ
m
1.0
μ
m
1.0
μ
m
100x100
μ
m
55
μ
m
80.0
μ
m
Special Feature of C3013 Process: P-well analog process with single metal CMOS 3.0
μ
m
technology for 10 Volt applications.
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