參數(shù)資料
型號： C3017
廠商： IMP INC.
英文描述： 10 Volt Analog Mixed Mode
中文描述： 10伏模擬混合模式
文件頁數(shù)： 1/2頁
文件大?。?/td> 39K
代理商： C3017
91
IMP, Inc.
Process C3017
CMOS 3
μ
m
10 Volt Analog Mixed Mode
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
N
γ
N
β
N
Leff
N
W
N
BVDSS
N
VTF
P(N)
Minimum
0.6
Typical
0.8
0.6
47
3.2
0.7
Maximum
1.0
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x4
μ
m
100x4
μ
m
100x100
μ
m
100x4
μ
m
Per side
42
2.85
52
3.55
12
12
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
W
P
BVDSS
P
VTF
P(P)
Minimum
–0.6
Typical
–0.8
0.55
15
3.2
0.9
Maximum
–1.0
Unit
V
V
1/2
μ
A/V
2
μ
m
μ
m
V
V
Comments
100x4
μ
m
100x4
μ
m
100x100
μ
m
100x4
μ
m
Per side
13
2.85
19
3.55
–12
–12
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρ
P-well(f)
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
P1P2
ρ
POLY1
ρ
POLY2
M1
ρ
M2
T
PASS
Minimum
3.2
16
Typical
4.8
21
0.8
80
0.7
48
60
22
22
50
30
200+900
Maximum
6.5
27
Unit
K
/
o
/
o
μ
m
/
o
μ
m
nm
nm
/
o
/
o
m
/
o
m
/
o
nm
Comments
P-well
50
100
44
52
15
15
30
30
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
C
OX
C
M1P
C
M1S
C
MM
C
P1P2
Minimum
0.66
Typical
0.72
0.0523
0.30
0.0384
0.57
Maximum
0.78
Unit
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
fF/
μ
m
2
Comments
0.26
0.033
0.51
0.34
0.041
0.63
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
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