參數(shù)資料
型號: BUT12AI
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 65K
代理商: BUT12AI
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Inductive fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5
MAX.
1000
450
8
20
110
1.5
-
300
UNIT
V
V
A
A
W
V
A
ns
T
hs
25 C
I
C
= 5 A; I
B
= 0.86A
I
Con
= 5 A; I
Bon
= 1.0 A;T
j
100C
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
8
20
4
6
110
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
hs
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
-
MAX.
1.15
60
UNIT
K/W
K/W
1 2 3
tab
b
c
e
June 1997
1
Rev 1.000
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