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參數(shù)資料
| 型號： | BUK9618-56 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET) |
| 中文描述： | TrenchMOS（商標）場效應晶體管邏輯電平（TrenchMOS（商標）晶體管邏輯電平場效應管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 68K |
| 代理商： | BUK9618-56 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9618-55
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998
8
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| BUK961R4-30E | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 120A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 120A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes |
| BUK961R4-30E,118 | 功能描述:MOSFET N-channel TrenchMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK961R5-30E | 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 30V 120A D2PAK |
| BUK961R5-30E,118 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK961R6-40E | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 40V 120A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 40V, 120A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 40V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00117ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes |
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