參數(shù)資料
型號： BUK9621-30
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS transistor Logic level FET
中文描述： 50 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/7頁
文件大?。?/td> 53K
代理商： BUK9621-30
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9621-30
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting using ’
trench
’ technology.
Thedevicefeaturesverylowon-state
resistance and has integral zener
diodes giving ESD protection up to
2kV. It is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
30
50
94
175
21
V
A
W
C
m
V
GS
= 5 V
PINNING - SOT404 (D
2
PAK)
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
10
50
29
200
94
175
UNIT
V
V
V
A
A
A
W
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.6
UNIT
K/W
R
th j-a
pcb mounted, minimum
footprint
50
-
K/W
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
1
3
mb
2
July 1997
1
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK9624-55 TrenchMOS transistor Logic level FET
BUK9624-56 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
BUK9628-55 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
BUK9635-56 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
BUK9675-55 TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶體管邏輯電平FET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK9623-75A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS⑩ logic level FET
BUK9623-75A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9623-75A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9624-55 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
BUK9624-55A 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 46A 3-Pin(2+Tab) D2PAK Cut Tape 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 46A SOT404 制造商:NXP Semiconductors 功能描述:MOSFET, N CH 55V 46A SOT404
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*