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參數(shù)資料
| 型號： | BUK856-800A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor IGBT |
| 中文描述： | 24 A, 800 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | BUK856-800A |
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.19. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
March 1993
6
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
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| BUT11XI | Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK866-400IZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
| BUK866-400IZT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404 |
| BUK9006-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel Enhancement mode field-effect power Transistor |
| BUK9107-40ATC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426 |
| BUK9107-40ATC /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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