參數(shù)資料
型號(hào)： BUK856-800A
廠商： NXP SEMICONDUCTORS
元件分類： IGBT 晶體管
英文描述： Insulated Gate Bipolar Transistor IGBT
中文描述： 24 A, 800 V, N-CHANNEL IGBT, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 5/7頁(yè)
文件大小： 60K
代理商： BUK856-800A
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
Fig.13. Typical Switching Times vs. R
conditions: I
C
= 12 A; V
CL
= 500 V; T
j
= 125 C
Fig.14. Typical Switching Times vs. I
conditions: V
CL
= 500 V; R
G
= 25
; T
j
= 125C
Fig.15. Test circuit for inductive load switching times
Fig.16. Typical Energy loss at turn-off vs. R
conditions: I
C
= 12 A; V
CL
= 500 V; T
j
= 125 C
Fig.17. Typical Energy loss at turn-off vs. I
conditions: V
CL
= 500 V; R
= 25
; T
j
= 125C;
parameter V
CL
Fig.18. Inductive Load Switching Times definitions.
1
100
Rg / Ohm
t / ns
BUK8Y6-800A
10000
1000
100
10
10
1000
td(off)
tf
1
100
E(off) / mJ
BUK8Y6-800A
4
3
2
1
0
Rg / Ohm
10
1000
0
20
40
IC / A
E(off) / mJ
BUK8Y6-800A
4
3
2
1
0
400
300
VCL / V = 500
10
30
0
20
IC / A
t / ns
BUK8Y6-800A
500
400
300
200
100
0
td(off)
tf
10
30
: adjust for correct Ic
VCC = VCL
Lc
D.U.T.
R
0V
tp
0R1
G
VGE
IC measure
tr
td(on)
tc
tf
td(off)
I
V
t
t
IC
VGE
VCE
10%
90%
90%
10%
March 1993
5
Rev 1.000
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參數(shù)描述
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