參數(shù)資料
型號： BUK856-800A
廠商： NXP SEMICONDUCTORS
元件分類： IGBT 晶體管
英文描述： Insulated Gate Bipolar Transistor IGBT
中文描述： 24 A, 800 V, N-CHANNEL IGBT, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 4/7頁
文件大小： 60K
代理商： BUK856-800A
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
Fig.7. Typical transconductance, T
= 25 C
g
fe
= f(I
C
); conditions: V
CE
= 15 V
Fig.8. Typical turn-on gate-charge characteristics.
V
GE
= f(Q
G
); conditions: I
C
= 12 A; parameter V
CE
Fig.9. Typical Switching Times vs. T
conditions: I
C
= 12 A; V
CL
= 500 V; R
G
= 25
Fig.10. Typical capacitances, C
, C
, C
.
C = f(V
CE
); conditions: V
GE
= 0 V; f = 1MHz.
Fig.11. Typical turn-off dV
/dt vs. R
conditions: I
C
= 12 A; V
CL
= 500 V; T
j
= 125 C
Fig.12. Typical Switching losses vs. T
conditions: I
C
= 12 A; V
CL
= 500 V; R
G
= 25
0
20
40
IC / A
gfe / S
BUK8Y6-800A
15
10
5
0
10
30
50
0
20
40
VDS / V
C / pF
Cies
Coes
Cres
10
100
1000
10000
10
30
BUK8Y6-800A
0
20
40
60
QG / nC
VGE / V
BUK8Y6-800A
16
14
12
10
8
6
4
2
0
10
30
50
1
100
Rg / Ohm
dVCE/dt (V/ns)
BUK8Y6-800A
15
10
5
0
10
1000
0
20
40
60
80
100
120
140
Tj / C
t / ns
BUK8Y6-800A
600
500
400
300
200
100
0
td(off)
tf
0
20
40
60
80
100
120
140
Tj / C
E / mJ
BUK8Y6-800A
1.5
1
0.5
0
E(on)
E(off)
March 1993
4
Rev 1.000
相關(guān)PDF資料
PDF描述
BUT11XI Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
BY359-1500 SCREWDRIVER, SENSO PH NO.1 X 80SCREWDRIVER, SENSO PH NO.1 X 80; Tip type:Phillips; Length, blade:80mm; Driver type:Phillips No 1; Handle type:COLOUR CODED; Tip Size:No.1
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