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參數(shù)資料
| 型號： | BUK573-48C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Clamped logic level FET |
| 中文描述： | 13 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BUK573-48C |
Philips Semiconductors
Product specification
PowerMOS transistor
Clamped logic level FET
BUK573-48C
Fig.9. Typical clamping voltage
V
(CL)DSR
= f(I
D
); conditions: R
G
= 10 k
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 10 A; V
GS
= 5 V
Fig.11. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.12. Typical clamping voltgage
V
(CL)DSR
= f(R
G
); conditions: I
D
= 10 A
Fig.13. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.14. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
0
2
4
6
8
10
12
43
44
45
46
47
48
49
50
51
BUK5Y3-48C
ID / A
V(CL)DSR / V
Tmb / degC =
150
25
-55
1
10
20
44
46
48
50
52
54
56
58
BUK5Y3-48C
RG / kOhm
V(CL)DSR / V
Tmb / degC =
150
25
-55
5
2
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
2
1
0
max.
typ.
min.
0
0.5
1
1.5
0
10
20
30
40
BUK5Y3-48C
VSDS / V
IS / A
Tmb / degC =
150
25
-55
0
0.4
0.8
1.2
1.6
2
2.4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
2 %
typ
98 %
August 1994
5
Rev 1.000
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