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參數(shù)資料
| 型號： | BUK573-48C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Clamped logic level FET |
| 中文描述： | 13 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BUK573-48C |
Philips Semiconductors
Product specification
PowerMOS transistor
Clamped logic level FET
BUK573-48C
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
13
UNIT
A
-
I
F
= 13 A ; V
GS
= 0 V
-
-
-
52
1.3
A
V
1.05
CLAMPED ENERGY LIMITING VALUE
SYMBOL
W
DSRS
PARAMETER
Drain-source non repetitive
clamped inductive turn off
energy
Drain-source repetitive clamped T
j
= 150C prior to clamping;
inductive turn off energy
CONDITIONS
T
j
= 25C prior to clamping;
I
= 10 A; V
= 5 V; R
= 10 k
;
inductive load (see Figs. 17,18)
MIN.
-
MAX.
200
UNIT
mJ
W
DSRR
-
50
mJ
I
= 10 A; V
= 5 V; R
= 10 k
;
inductive load (see Figs. 17,18)
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
≥
5 V
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
August 1994
3
Rev 1.000
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