參數(shù)資料
型號(hào): BUK444-800
廠商: NXP Semiconductors N.V.
英文描述: PowerMOS transistor
中文描述: 功率金屬氧化物半導(dǎo)體晶體管
文件頁數(shù): 3/7頁
文件大?。?/td> 67K
代理商: BUK444-800
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
BUKx44-hv
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
4
8
12
16
20
24
28
BUK454-800A
VDS / V
ID / A
4
3
2
1
0
4
4.2
4.4
4.6
4.8
5
6
10
10
1000
VDS / V
10
1
0.1
0.01
BUK444-800A,B
100
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
A
B
RDS(ON) = VDS/ID
DC
0
1
2
3
4
BUK454-800A
ID / A
20
15
10
5
0
4
4.2
4.4
4.6
4.8
5
6
10
RDS(ON) / Ohm
VGS / V =
April 1993
3
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK444-800A PowerMOS transistor
BUK444-800B PowerMOS transistor
BUK454-800A PowerMOS transistor
BUK454-800B PowerMOS transistor
BUK456-800 PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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BUK444-800B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
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