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參數(shù)資料
| 型號(hào)： | BUK444-800 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 功率金屬氧化物半導(dǎo)體晶體管 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 67K |
| 代理商： | BUK444-800 |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
800
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 800 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 800 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
2
0.1
10
5.0
6.0
4.0
20
1.0
100
6.0
8.0
V
μ
A
mA
nA
BUK444-800A
BUK444-800B
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 1.0 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
1.0
-
-
-
-
-
-
-
-
TYP.
2.3
450
42
15
15
25
50
30
4.5
MAX.
-
750
70
30
20
40
65
40
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 1.9 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
1.4
UNIT
A
-
I
F
= 1.4 A ; V
GS
= 0 V
I
F
= 1.4 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 100 V
-
-
-
-
-
5.6
1.3
-
-
A
V
ns
μ
C
1.0
230
1.9
April 1993
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK444-800A | PowerMOS transistor |
| BUK444-800B | PowerMOS transistor |
| BUK454-800A | PowerMOS transistor |
| BUK454-800B | PowerMOS transistor |
| BUK456-800 | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK444-800A | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK444-800A/B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR TO 220 MOSFET ISOLIERT |
| BUK444-800B | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK445-100A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK445-100B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-Channel Enhancement MOSFET |
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