參數(shù)資料
型號(hào): BUK436W-800A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: RECTIFIER SCHOTTKY SINGLE 2A 80V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
中文描述: 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 69K
代理商: BUK436W-800A
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-800A/B
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 1.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
BUK4y6-800A
VGS / V
8
6
4
2
0
ID / A
25
150
Tj / C =
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
2
4
6
8
BUK4y6-800A
ID / A
7
6
5
4
3
2
1
0
gfs / S
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y6-800
February 1998
4
Rev 1.000
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