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參數(shù)資料
| 型號(hào)： | BUK438W-800A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE |
| 中文描述： | 7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | BUK438W-800A |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK438W-800A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK438
-800A
800
7.6
220
1.5
-800B
800
6.6
220
2.0
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
V
A
W
PINNING - SOT429 (TO247)
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
800
800
30
UNIT
V
V
V
-800A
7.6
4.8
30
-800B
6.6
4.1
26
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
220
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
0.57
UNIT
K/W
R
th j-a
-
45
-
K/W
2
3
1
d
g
s
February 1998
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK438W-800B | RECTIFIER BRIDGE 8A 200V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE |
| BUK438-800A | PowerMOS transistor |
| BUK438-800B | PowerMOS transistor |
| BUK444-800 | PowerMOS transistor |
| BUK444-800A | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK438W800B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK438W-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK439-60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-93 |
| BUK441-100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK441-100B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
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