- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375403 > BUK106-50S (NXP SEMICONDUCTORS) PowerMOS transistor Logic level TOPFET PDF資料下載
參數(shù)資料
| 型號： | BUK106-50S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 160 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263, SEP-5 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 143K |
| 代理商： | BUK106-50S |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Normal operation
V
IS(TO)
Input threshold voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 5 V; I
D
= 1 mA
1.0
0.5
-
11
1.5
-
10
13
2.0
-
100
-
V
V
nA
V
T
mb
= 150 C
I
IS
V
(CL)IS
Input current
Input clamp voltage
Overload protection latched
Input resistance
1
V
= 10 V
I
I
= 1 mA
R
ISL
V
PS
= 5 V
I
I
= 5 mA;
T
= 150 C
I
I
= 5 mA;
T
mb
= 150 C
-
-
-
-
55
95
35
60
-
-
-
-
V
PS
= 10 V
Application information
External input resistances for
internal overvoltage clamping
2
internal overload protection
3
(see figure 29)
R
I
=
∞
;
R
IS
=
∞
;
R
IS
R
I
V
DS
> 30 V
V
II
= 5 V
V
II
= 10 V
100
1
2
-
-
-
-
-
-
k
k
SWITCHING CHARACTERISTICS
T
mb
= 25 C; R
I
= 50
; R
IS
= 50
(see figure 29); resistive load R
L
= 10
. For waveforms see figure 28.
SYMBOL
PARAMETER
CONDITIONS
t
d on
Turn-on delay time
V
DD
= 15 V; V
IS
: 0 V
10 V
t
r
Rise time
t
d off
Turn-off delay time
V
DD
= 15 V; V
IS
: 10 V
0 V
t
f
Fall time
MIN.
-
-
-
-
TYP.
10
35
280
120
MAX.
-
-
-
-
UNIT
ns
ns
ns
ns
CAPACITANCES
T
mb
= 25 C; f = 1 MHz
SYMBOL
C
iss
C
oss
C
rss
C
pso
PARAMETER
Input capacitance
Output capacitance
Reverse transfer capacitance
Protection supply pin
capacitance
Flag pin capacitance
CONDITIONS
V
DS
= 25 V; V
IS
= 0 V
V
DS
= 25 V; V
IS
= 0 V
V
DS
= 25 V; V
IS
= 0 V
V
PS
= 10 V
MIN.
-
-
-
-
TYP.
1250
650
150
30
MAX.
1800
1000
250
-
UNIT
pF
pF
pF
pF
C
fso
V
FS
= 10 V; V
PS
= 0 V
-
20
-
pF
1
The resistance of the internal transistor which discharges the power MOSFET gate capacitance when overload protection operates.
The external drive circuit should be such that the input voltage does not exceed V
IS(TO)
minimum when the overload protection has
operated. Refer also to figure for latched input characteristics.
2
Applications using a lower value for R
IS
would require external overvoltage protection.
3
For applications requiring a lower value for R
I
, an external overload protection strategy is possible using the flag pin to ‘tell’ the control circuit to
switch off the input.
February 1993
5
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK127-50GT | PowerMOS transistor Logic level TOPFET |
| BUK1M200-50SDLD | Quad channel TOPFET |
| BUK212-50Y | Single channel high-side TOPFET⑩ |
| BUK218-50DY | TOPFET dual high side switch |
| BUK220-50Y | RECEPTACLE, MDR, R/A, 36WAY; Connector type:Micro D Ribbon; Gender:Receptacle; Ways, No. of:36; Termination method:Solder; Material, contact:Copper Alloy; Plating, contact:Gold; Mounting type:PC Board; Colour:Beige; Current RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK106-50SP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK107-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK107-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK107-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK107-50DLT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。