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參數(shù)資料
| 型號： | BUK106-50S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 160 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263, SEP-5 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 143K |
| 代理商： | BUK106-50S |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
Voltages
V
DSS
Continuous off-state drain source
voltage
1
V
IS
Continuous input voltage
V
FS
Continuous flag voltage
V
PS
Continuous supply voltage
Currents
I
D
Continuous drain current
I
D
Continuous drain current
I
DRM
Repetitive peak on-state drain current
Thermal
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
2
T
sold
Lead temperature
CONDITIONS
MIN.
MAX.
UNIT
V
IS
= 0 V
-
50
V
-
-
-
0
0
0
-
-
-
-
11
11
11
V
V
V
V
A
A
A
V
IS
=
8
5
45
28
T
mb
≤
25 C
T
mb
≤
100 C
T
mb
≤
25 C
50
31
200 180
T
mb
= 25 C
-
continuous
during soldering
-
125
150
150
250
W
C
C
C
-55
-
-
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply
connected, TOPFET can protect
itself from two types of overload -
over temperature and short circuit
load.
SYMBOL
PARAMETER
An n-MOS transistor turns on
between the input and source to
quickly discharge the power
MOSFET gate capacitance.
For internal overload protection to
remain latched while the control
circuit is high, external series input
resistance must be provided. Refer
to INPUT CHARACTERISTICS.
MIN.
MAX.
V
IS
=
8
5
CONDITIONS
UNIT
V
-
V
PSP
Protection supply voltage
3
for valid protection
BUK106-50L
BUK106-50S
4.4
5.4
4
5
-
-
V
V
Over temperature protection
Protected drain source supply voltage
V
PS
= V
PSN
V
IS
= 10 V; R
I
≥
2 k
V
IS
= 5 V; R
I
≥
1 k
V
PS
= V
PSN
; L
≤
10
μ
H
V
DDP(T)
-
-
50
50
V
V
Short circuit load protection
Protected drain source supply voltage
4
V
IS
= 10 V; R
I
≥
2 k
V
DDP(P)
-
-
-
24
45
4
V
V
V
IS
= 5 V; R
I
≥
1 k
P
DSM
Instantaneous overload dissipation
kW
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
The minimum supply voltage required for correct operation of the overload protection circuits.
4
The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed V
DDP(P)
maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
February 1993
2
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK106-50SP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK107-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK107-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK107-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK107-50DLT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223 |
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