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參數(shù)資料
| 型號： | BUK106-50L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET |
| 中文描述： | 160 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263, SEP-5 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 143K |
| 代理商： | BUK106-50L |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
OVERLOAD PROTECTION CHARACTERISTICS
With adequate protection supply
voltage TOPFET detects when one
of the overload thresholds is
exceeded.
SYMBOL
PARAMETER
Short circuit load protection
1
E
DS(TO)
Overload threshold energy
t
d sc
Response time
Over temperature protection
T
j(TO)
Threshold junction temperature from I
D
2.5 A
3
Provided there is adequate input
series resistance it switches off
and remains latched off until reset
by the protection supply pin.
CONDITIONS
V
PS
= V
V
DD
= 13 V; V
IS
= 10 V
V
DD
= 13 V; V
IS
= 10 V
V
= V
PSN
Refer also to OVERLOAD
PROTECTION LIMITING VALUES
and INPUT CHARACTERISTICS.
MIN.
TYP.
MAX.
UNIT
2
; T
mb
= 25 C; L
≤
10
μ
H
-
-
550
0.4
-
-
mJ
ms
150
-
-
C
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 12 V; I
DM
= 25 A t
p
≤
300
μ
s;
δ
0.01
V
DS
= 13 V;
MIN.
17
TYP.
28
MAX.
-
UNIT
S
I
D
Drain current
4
V
= 5 V
V
IS
= 10 V
-
80
160
-
-
A
A
PROTECTION SUPPLY CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Protection supply
I
PS
,
Protection supply current
I
PSL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
normal operation or
protection latched
BUK106-50L
BUK106-50S
V
PS
= 5 V
V
PS
= 10 V
-
-
0.2
0.4
2.5
-
13
0.35
1.0
3.5
-
-
mA
mA
V
V
V
V
PSR
Protection reset voltage
5
1.5
1.0
11
T
j
= 150 C
I
P
= 1.35 mA
V
(CL)PS
Protection clamp voltage
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
V
SDS
Forward voltage
CONDITIONS
I
S
= 20 A; V
IS
= V
PS
= V
FS
= 0 V;
t
p
= 300
μ
s
not applicable
6
MIN.
-
TYP.
0.9
MAX.
1.2
UNIT
V
t
rr
Reverse recovery time
-
-
-
-
1
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum.
2
At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA.
3
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
4
During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS.
5
The supply voltage below which the overload protection circuits will be reset.
6
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
February 1993
4
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK106-50LP | PowerMOS transistor Logic level TOPFET |
| BUK106-50S | PowerMOS transistor Logic level TOPFET |
| BUK127-50GT | PowerMOS transistor Logic level TOPFET |
| BUK1M200-50SDLD | Quad channel TOPFET |
| BUK212-50Y | Single channel high-side TOPFET⑩ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK106-50L/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 TOPFET 5POLIG |
| BUK106-50L/S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Output Stage |
| BUK106-50LP | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK106-50LP/SP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Output Stage |
| BUK106-50LS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Output Stage |
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