參數(shù)資料
型號(hào): BUK106-50LP
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor Logic level TOPFET
中文描述: 160 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝: PLASTIC, SOT-263-01, 5 PIN
文件頁數(shù): 1/14頁
文件大?。?/td> 143K
代理商: BUK106-50LP
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in a 5 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
50
125
150
V
A
W
C
APPLICATIONS
V
IS
= 5 V
V
IS
= 8 V
35
28
m
m
General controller for driving
lamps
motors
solenoids
heaters
SYMBOL
PARAMETER
NOM.
UNIT
V
PSN
Protection supply voltage
BUK106-50L
BUK106-50S
5
10
V
V
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible
Fig.1. Elements of the TOPFET.
PINNING - SOT263
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
flag
3
drain
4
protection supply
5
source
Fig. 2. Type numbers ending with
suffix P refer to leadform 263-01.
Fig. 3.
tab
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
PROTECTION SUPPLY
FLAG
leadform
263-01
tab
1 2 3 4 5
D
S
I
TOPFET
P
F
P
February 1993
1
Rev 1.200
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