參數(shù)資料
型號(hào)： BUJ304A
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 6 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 70K
代理商： BUJ304A
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ304A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(500V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 4 A; I
B
= 0.8 A
I
C
= 4 A; I
= 0.8 A
I
C
= 5 mA; V
= 5 V
I
C
= 500 mA;V
= 5 V
I
C
= 4 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.2
0.5
UNIT
mA
mA
I
CEO
I
EBO
V
CEOsust
Collector cut-off current Emitter
cut-off current
Collector-emitter sustaining voltage
-
-
-
-
-
0.1
1
-
mA
mA
V
500
V
CEsat
V
BEsat
h
FE
h
FE
h
FESAT
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.3
1.0
17
22
11
1.0
1.3
34
35
15
V
V
10
14
8
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 5.0 A; I
= -I
= 1.0 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.8
2.1
375
1.0
3.0
527
μ
s
μ
s
ns
I
= 5.0 A; I
Bon
= 1.0 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
1.45
25
1.7
50
μ
s
ns
I
= 5.0 A; I
Bon
= 1.0 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
1.64
40
2.2
100
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
March 1999
2
Rev 1.000
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