參數(shù)資料
型號: BUJ204A
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 6/12頁
文件大?。?/td> 103K
代理商: BUJ204A
August 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204A
Fig.13. Reverse
bias safe operating area T
j
T
jmax
Fig.14. Test Circuit for reverse
bias safe operating
area.
V
cl
1000V; V
= 150V; V
BB
= -5V;
L
B
= 1
μ
H; L
c
= 200
μ
Fig.15. Forward bias safe operating area. T
hs
25 C
(1)
(2)
I
II
III
P
max and P
peak max lines.
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
100
and t
0.6
μ
s.
Mounted with heatsink compound and
30
±
5 newton force on the centre of the
envelope.
NB:
0
100
200
300
400
VCEclamp (V)
500
600
700
800
900
1,000
0
1
2
3
4
5
6
7
8
9
10
11
IC (A)
1
10
100
1,000
0.01
0.1
1
100
VCEclamp (V)
IC (A)
tp =
10us
100us
0.5ms
2ms
DC
I
II
III
(1)
(2)
Duty cycle = 0.01
Icm max
Ic max
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
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