參數(shù)資料
型號: BUJ204A
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/12頁
文件大小: 103K
代理商: BUJ204A
August 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ204A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.29
12
88
MAX.
850
850
450
6
10
100
1.5
-
150
UNIT
V
V
V
A
A
W
V
T
mb
25 C
I
= 4 A; V
CE
= 5 V
Ic=2.5A,I
B1
=0.5A
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
850
450
850
6
10
2
4
100
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
in free air
1 2 3
tab
b
c
e
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