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參數(shù)資料
| 型號： | BUJ205A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 18K |
| 代理商： | BUJ205A |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ205A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
-
MAX.
850
850
450
8
12
125
1.5
300
UNIT
V
V
V
A
A
W
V
μ
s
T
mb
≤
25 C
I
= 1.0 A
Ic=6A,I
B1
=1.2A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
850
450
850
8
12
4
6
125
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
60
MAX.
1
-
UNIT
K/W
K/W
in free air
1 2 3
tab
b
c
e
August 1998
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ205AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ301A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ301AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ302 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ302A | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 4A 1050V TO220 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 4A, 1050V, TO220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.05kV; Power Dissipation Pd:80W; DC Collector Current:4A; DC Current Gain hFE:66; No. of Pins:3 ;RoHS Compliant: Yes |
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