參數(shù)資料
型號: BTS740-S2
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?5.0 - 34V的。 2x30mΩ極限(可控硅)第24A示波器- 20 - 9?
文件頁數(shù): 8/16頁
文件大小: 439K
代理商: BTS740-S2
PROFET
BTS 740 S2
Semiconductor Group
Page 8
2002-Sep-30
Truth Table
Input 1
Output 1
Status 1
Current
Sense 1
Current
Sense 2
Input 2
Output 2
Status 2
level
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
level
L
H
L
H
L
L
19
)
L
L
H
H
L
22
)
H
L
L
L
L
L
level
H
L
H
H
H
H
H
H
L
20
)
L
H (L
23
)
)
L
H
L
H
L
H
IIS
0
Normal
operation
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
bb
Open load
nominal
0
0
0
0
0
0
0
<nominal
21
)
0
0
0
0
0
0
0
Undervoltage
Overvoltage
Negative output
voltage clamp
L = "Low" Level
H = "High" Level
Parallel switching of channel 1 and 2 is possible by connecting the inputs and outputs in parallel. The status
outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. The current
sense outputs IS1 and IS2 have to be connected with a single pull-down resistor.
X = don't care
Status signal after the time delay shown in the diagrams (see fig 5. page 14)
Z = high impedance, potential depends on external circuit
19
)The voltage drop over the power transistor is
V
bb
-
V
OUT
> 3V typ. Under this condition the sense current
I
IS
is
zero
20)
An external short of output to V
bb
, in the off state, causes an internal current from output to ground. If R
GND
is used, an offset voltage at the GND and ST pins will occur and the V
ST low
signal may be errorious.
21
)Low ohmic short to
V
bb
may reduce the output current
I
L
and therefore also the sense current
I
IS
.
22
)Power Transistor off, high impedance
23
)with external resistor between V
BB
and OUT
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