參數(shù)資料
型號: BTS740-S2
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?5.0 - 34V的。 2x30mΩ極限(可控硅)第24A示波器- 20 - 9?
文件頁數(shù): 11/16頁
文件大?。?/td> 439K
代理商: BTS740-S2
PROFET
BTS 740 S2
Semiconductor Group
Page 11
2002-Sep-30
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb
VINVST
VGND
Any kind of load. In case of IN
=
high is
V
OUT
V
IN
-
V
IN(T+)
.
Due to V
GND
>
0, no V
ST
= low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
VGND
VINVST
Any kind of load. If V
GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
>
0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
high
For inductive load currents up to the limits defined by Z
L
(max. ratings and diagram on page 11) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation
E
bb
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
= I
L
·
L
2
·
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
Maximum allowable load inductance for
a single switch off
(one channel)
4)
L = f (IL );
Tj,start =
150
°
C, Vbb =
12
V, RL =
0
ZL [mH]
1000
1
10
100
2
3
4
5
6
7
8
9
10
11
12
IL [A]
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