參數(shù)資料
型號： BLF276
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： VHF power MOS transistor
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, PILL PACKAGE-6
文件頁數(shù)： 6/13頁
文件大?。?/td> 85K
代理商： BLF276
December 1997
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF276
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
mb
= 25
°
C unless otherwise specified.
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
P
(dB)
≥
13
typ. 15
≥
18
typ. 22
η
D
(%)
≥
50
typ. 57
≥
60
typ. 75
CW, class-B
225
50
50
100
108
50
50
100
Ruggedness in class-B operation
The BLF276 is capable of withstanding a load mismatch
corresponding to VSWR = 8 through all phases under the
following conditions:
V
DS
= 50 V; f = 225 MHz;
T
mb
= 25
°
C at rated load power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; V
DS
= 50 V; I
DQ
= 50 mA;
f = 225 MHz.
handbook, halfpage
gain
(dB)
0
4
8
12
16
0
20
40
60
80
100
η
(%)
0
20
40
60
80
100
PL (W)
120
140
η
MRA937
gain
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; V
DS
= 50 V; I
DQ
= 50 mA;
f = 225 MHz.
handbook, halfpage
(W)
0
20
40
60
80
100
120
0
2
4
6
PIN (W)
8
MRA942
相關(guān)PDF資料
PDF描述
BLF277 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF348 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF861 UHF power LDMOS transistor
BLT53 UHF power transistor
BLT61 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF277 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power MOS transistor
BLF278 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278/01,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278112 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1
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