參數(shù)資料
型號： BLF276
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： VHF power MOS transistor
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, PILL PACKAGE-6
文件頁數(shù)： 4/13頁
文件大?。?/td> 85K
代理商： BLF276
December 1997
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF276
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
0.4
12
240
95
7
MAX. UNIT
1
1
4.5
0.6
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 30 mA
V
GS
= 0; V
DS
= 50 V
±
V
GS
= 20 V; V
DS
= 0
I
D
= 50 mA; V
DS
= 10 V
I
D
= 3 A; V
DS
= 10 V
I
D
= 3 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
110
2
2.7
8
V
mA
μ
A
V
S
A
pF
pF
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
V
DS
= 10 V.
handbook, halfpage
TC
(mV/K)
1
2
3
4
5
10
2
10
1
10
1
ID (A)
MRA945
Fig.5
Drain current as a function of gate-source
voltage, typical values.
V
DS
= 10 V.
handbook, halfpage
0
4
8
12
0
2
4
6
8
ID
(A)
10
VGS (V)
12
14
MRA940
相關(guān)PDF資料
PDF描述
BLF277 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF348 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF861 UHF power LDMOS transistor
BLT53 UHF power transistor
BLT61 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF277 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power MOS transistor
BLF278 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278/01,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278112 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1
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