參數(shù)資料
型號(hào): BLF276
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power MOS transistor
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, PILL PACKAGE-6
文件頁數(shù): 12/13頁
文件大?。?/td> 85K
代理商: BLF276
December 1997
12
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF276
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT119D
97-06-28
0
5
10 mm
scale
Flangeless ceramic package; 6 leads
SOT119D
5.59
5.33
1.71
1.44
D
D1
A
UNIT
Q
mm
b
4.53
3.70
A
5.34
5.08
b1
4.07
3.81
b2
0.16
0.10
c
12.86
12.59
D
12.83
12.57
D1
18.55
18.28
H1
21.97
21.20
H
0.51
w2
0.26
w3
6.48
0.220
0.210
0.067
0.057
inches
0.178
0.146
0.210
0.200
0.160
0.150
0.006
0.004
0.506
0.496
0.505
0.495
0.730
0.720
0.865
0.835
0.02
0.01
0.255
e
b2
Q
c
1
2
3
4
5
6
H
b
M
w3
b1
e
A
M
A
w2
H1
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
相關(guān)PDF資料
PDF描述
BLF277 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF348 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF861 UHF power LDMOS transistor
BLT53 UHF power transistor
BLT61 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF277 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power MOS transistor
BLF278 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278/01,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278112 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1