型號(hào): | BLF276 |
廠商: | NXP SEMICONDUCTORS |
元件分類: | 功率晶體管 |
英文描述: | VHF power MOS transistor |
中文描述: | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
封裝: | CERAMIC, PILL PACKAGE-6 |
文件頁數(shù): | 12/13頁 |
文件大?。?/td> | 85K |
代理商: | BLF276 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
BLF277 | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
BLF348 | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
BLF861 | UHF power LDMOS transistor |
BLT53 | UHF power transistor |
BLT61 | UHF power transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
BLF277 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power MOS transistor |
BLF278 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
BLF278,112 | 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
BLF278/01,112 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
BLF278112 | 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1 |