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參數(shù)資料
| 型號： | BLF247B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 75K |
| 代理商： | BLF247B |
August 1994
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
Notes
1.
2.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (
ε
r
= 2.2);
thickness
1
16
inch; thickness of the copper sheet 2
×
35
μ
m.
Semi-rigid cables L2 and L25 are soldered onto striplines L1 and L26.
3.
L15, L16
3 turns enamelled 1.6 mm
copper wire
50 nH
length 7.8 mm
internal diameter 6 mm
leads 2
×
10 mm
length 6 mm
width 6 mm
length 15 mm
width 6 mm
length 26.5 mm
width 6 mm
L18, L19
stripline; note 2
43
L20, L21
stripline; note 2
43
L22, L23
stripline; note 2
43
R1, R6
R2, R3, R4, R5 metal film resistor
R7
metal film resistor
R8, R9
metal film resistor
IC1
voltage regulator
10 turns potentiometer
50 k
1 k
; 0.4 W
5.11 k
; 1 W
10
; 1 W
78L05
COMPONENT
DESCRIPTION
VALUE
DIMENSION
CATALOGUE NO.
Fig.12 Component layout for 225 MHz class-B test circuit.
Dimensions in mm.
The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized to serve as a ground plane. Earth
connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
handbook, full pagewidth
IC1
R7
C30
VDD1
to R1, R6
C27
C29
slider R1 C9
C28
C8
R2
R3
L1
L2
L3
C1
C2
C3
C4
L4
L5
C5
C6
C7
L7
L6
C11
C10
L11
L9
R4
L8
L10
R5
slider R6
L12 L18 L20
C14
L22
L13 L19 L21
L23
L16
L15
C24
L17
R9
L17
C26
C25
C13
VDD2
L25
L26
C19
C20
C17
C18
L24
C23
L14
R8
L14
C21
C22
C12
VDD1
B
130
119
100
MBD295
C15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF248 | 功能描述:射頻MOSFET電源晶體管 RF DMOS 300W VHF P-P RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF248,112 | 功能描述:射頻MOSFET電源晶體管 RF DMOS 300W VHF P-P RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF25 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| BLF25M612,112 | 功能描述:射頻MOSFET電源晶體管 2.4-2.5GHz 65V 19dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF25M612,118 | 功能描述:射頻MOSFET電源晶體管 2.4-2.5GHz 65V 19dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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