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參數(shù)資料
| 型號(hào)： | BLF247B |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | BLF247B |
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August 1994
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
FEATURES
High power gain
Easy power control
Good thermal stability
Withstands full load mismatch.
APPLICATIONS
Large signal applications in the
VHF frequency range.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS push-pull
transistor encapsulated in a 4-lead,
SOT262A1 balanced flange type
package with two ceramic caps. The
mounting flange provides the
common source connection for the
transistor.
PINNING - SOT262A1
PIN
DESCRIPTION
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source
PIN CONFIGURATION
CAUTION
WARNING
The device is supplied in a antistatic package. The gate-source input must
be protected against static charge during transport or handling.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
1
2
3
4
MAM098
Top view
5
5
d
g
s
d
g
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
≥
12
η
D
(%)
≥
55
CW, class-B
225
28
150
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