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參數(shù)資料
| 型號(hào)： | AWM6422RM18P8 |
| 廠商： | ANADIGICS INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 2300 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4.50 X 4.50 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, M18, SURFACE MOUNT PACKAGE-12 |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 646K |
| 代理商： | AWM6422RM18P8 |
Data Sheet - Rev 2.2
10/2008
AWM6422
7
Figure 15: Gain vs. Case Temperature
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 16: Effects of Case Temperature on EVM
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
54 Mbps OFDM Modulation, system EVM
approx. 0.8 %)
Figure 17: Supply Current vs. Case Temperature
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 18: Effects of Case Temperature on
Detector Voltage (VCC = +3.3 V, VBIAS = +2.85 V,
f = 2.35 GHz, 54 Mbps OFDM Modulation)
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Case Temperature (deg C)
G
ai
n
(d
B
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
Uncorrected
EVM
(%
)
+85 deg C
+25 deg C
-40 deg C
Case Temp
275
280
285
290
295
300
305
310
315
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Case Temperature (deg C)
Ic
c
(m
A
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
Detector
Voltage
(V)
+85 deg C
+25 deg C
-40 deg C
Case Temp
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