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參數(shù)資料
| 型號： | AWT6301M9Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M9, 8 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 277K |
| 代理商： | AWT6301M9Q7 |
05/2005
AWT6301
Cellular Dual Mode AMPS/CDMA
3.4 V/28 dBm Linear PowerAmplifier Module
PRELIMINARY DATA SHEET - Rev 1.2
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
FEATURES
InGaP HBT Technology
High Efficiency: 53 % AMPS, 39 % CDMA
Low Quiescent Current: 60 mA
Low Leakage Current in Shutdown Mode: <1
A
VREF = +2.85 V (+2.7 V Min Over Temp.)
Optimized for a 50
System
Surface Mount Package
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
APPLICATIONS
Single Mode CDMA Wireless Handsets
Dual Mode AMPS/CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6301 meets the increasing demands for
higher efficiency and linearity in AMPS/CDMA 1X
handsets, while reducing pcb area by 44%. The
package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3mm x
3mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50
system.
Figure 1: Block Diagram
Bias Control
VCC1
VREF
RFIN
RFOUT
GND
VMODE
1
7
8
6
GND at slug (pad)
3
4
2
VCC2
GND
5
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