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參數(shù)資料
| 型號： | AP9T15GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 12.5 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AP9T15GH |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9T15GH/J
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
G
I
D
=10A
V
DS
=10V
V
DS
=12V
V
DS
=16V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
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|---|---|
| AP9T15GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP9T15GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16AGH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Capable of 2.5V Gate Drive |
| AP9T16GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GEH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:G-S Diode embedded, Capable of 2.5V gate drive |
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