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參數(shù)資料
| 型號： | AP9T15GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 12.5 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | AP9T15GH |
AP9T15GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=6A
V
G
=4.5V
0
10
20
30
40
50
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
5.0V
4.5V
3.5V
2.5V
V
G
=1.5V
T
C
=25
o
C
0
10
20
30
40
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=150
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=1.5V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
33
35
37
39
41
43
45
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=5.2A
T
C
=25
o
C
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| AP9T15GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9T15GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16AGH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Capable of 2.5V Gate Drive |
| AP9T16GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T16GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GEH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:G-S Diode embedded, Capable of 2.5V gate drive |
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