參數(shù)資料
型號(hào)： AP9930GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： 5.5 A, 30 V, 0.033 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 106K
代理商： AP9930GM
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9930GM
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
8.0V
6.0V
4.0V
V
G
=3.0V
0
5
10
15
20
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
V
G
=3.0V
10V
8.0V
6.0V
4.0V
25
30
35
40
45
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
)
I
D
=3A
T
A
=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=5A
V
G
=10V
1
1.2
1.4
1.6
1.8
2
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
V
G
0.01
0.10
1.00
10.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
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