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參數(shù)資料
| 型號(hào)： | AP9930GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 5.5 A, 30 V, 0.033 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 106K |
| 代理商： | AP9930GM |
AP9930GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
,I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
Test Conditions
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.04
-
-
-
4.8
-
-
-
7
2
4
11
8
20
18
490
190
130
Max. Units
-
-
55
100
-3
-
-1
-25
±100
11
-
-
-
-
-
-
790
-
-
V
GS
=0V, I
D
=-250uA
V
Δ
B
V
DSS
/
Δ
T
j
V/
℃
m
Ω
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=±25V
I
D
=-5A
V
DS
=-15V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=6
Ω
,V
GS
=-10V
R
D
=15
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
21
15
Max. Units
-1.2
-
-
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
S
=-1.2A, V
GS
=0V
I
S
=-1.7A, V
GS
=0V
dI/dt=-100A/μs
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 186
℃
/W when mounted on Min. copper pad.
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