- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375354 > AP9926M (ADVANCED POWER ELECTRONICS CORP) N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | AP9926M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 86K |
| 代理商： | AP9926M |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.1
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6A
-
-
30
m
Ω
V
GS
=2.5V, I
D
=5.2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=20V, V
GS
=0V
V
DS
=20V ,V
GS
=0V
V
GS
=
I
D
=6A
V
DS
=20V
V
GS
=5V
V
DS
=10V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=5V
R
D
=10
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
45
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
-
-
V
S
uA
15.6
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
1
25
Drain-Source Leakage Current (T
j
=70
o
C)
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
12.5
1
6.5
7
14.5
19
-
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
12
355
190
85
-
-
-
-
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
Parameter
Test Conditions
T
j
=25
℃
, I
S
=1.7A, V
GS
=0V
Min.
-
Typ.
-
Max.
1.2
Units
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
℃
/W when mounted on min. copper pad.
AP9926M
± 12
V
±
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9926O | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926TGO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9928GEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9930GM | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9930M | 2N AND 2P-CHANNEL ENHANCEMENT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9926O | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926TGO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9927 | 功能描述:電纜組件 BATT MGMT cbl 100’ 100" RoHS:否 制造商:Molex 產(chǎn)品:Power Assemblies 類型:Cable Assembly 連接器端口 A:No Connector 連接器端口 A 管腳計(jì)數(shù):4 連接器端口 B:No Connector 連接器端口 B 管腳計(jì)數(shù): 型式:Male 線規(guī) - 美國線規(guī)（AWG）:20, 28 長度:0.305 m 顏色:Black, Red |
| AP9928EO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOSFET |
| AP9928GEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Surface mount package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。