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參數(shù)資料
| 型號： | AP4501GSD |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 106K |
| 代理商： | AP4501GSD |
AP4501GSD
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
Min. Typ. Max. Units
-30
-
-
-0.03
-
-
-
-
-1
-
-
8
-
-
-
-
-
-
-
9
-
2
-
5
-
10
-
7
-
27
-
16
-
460
-
180
-
130
-
-
V
Δ
B
V
DSS
/
Δ
T
j
V/
℃
m
Ω
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-3A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5.3A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=
I
D
=-5A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=6
Ω
,
V
GS
=-10V
R
D
=15
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
49
75
-3
-
-1
-25
±
100
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current ( T
j
=25
o
C)
Drain-Source Leakage Current ( T
j
=70
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
15
-
-
-
-
-
-
730
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
I
S
=-1.7A, V
GS
=0V
I
S
=-5A, V
GS
=0V,
dI/dt=100A/μs
Min. Typ. Max. Units
-
-
-
21
-
18
Forward On Voltage
2
Reverse Recovery Time
2
-1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in
2
copper pad of
FR4 board ; 90
℃
/W when mounted on Min. copper pad.
±
20V
相關PDF資料 |
PDF描述 |
|---|---|
| AP4501M | N AND P-CHANNEL ENHANCEMENT |
| AP4501SD | 30V N-Channel PowerTrench MOSFET |
| AP4501SSD | N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4511GD | 30V N-Channel PowerTrench MOSFET |
| AP4511GH | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP4501M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT |
| AP4501SD | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501SSD | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4502AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP4502GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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