參數(shù)資料
型號(hào): AP4501M
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N AND P-CHANNEL ENHANCEMENT
中文描述: N和P溝道強(qiáng)化
文件頁數(shù): 1/11頁
文件大?。?/td> 123K
代理商: AP4501M
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
N-CH
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
30V
28m
Ω
7A
-30V
5
0
m
Ω
-5.3A
P-CH
Description
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
30
±20
Units
P-channel
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
-30
±20
V
V
-5.3
-4.7
-20
A
A
A
W
W/
T
STG
T
J
Symbol
Value
62.5
Unit
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
-55 to 150
0.016
-55 to 150
5.8
20
2
Parameter
201225022
AP4501M
Thermal Data
7
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
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