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參數(shù)資料
| 型號(hào)： | AP4501M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N AND P-CHANNEL ENHANCEMENT |
| 中文描述： | N和P溝道強(qiáng)化 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 123K |
| 代理商： | AP4501M |
AP4501M
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
Min. Typ. Max. Units
-30
-
-
-0.028
-
-
-
-
-1
-
-
8.5
-
-
-
-
-
-
-
20
-
3.5
-
2
-
12
-
20
-
45
-
27
-
790
-
440
-
120
-
-
V
Δ
B
V
DSS
/
Δ
T
j
V/
℃
m
Ω
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS
=-10V, I
D
=-5.3A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5.3A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=
I
D
=-5.3A
V
DS
=-15V
V
GS
=-10V
V
DS
=-15V
I
D
=-1A
R
G
=6
Ω
,
V
GS
=-10V
R
D
=15
Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
50
90
-3
-
-1
-25
±
100
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Test Conditions
V
D
=V
G
=0V , V
S
=-1.2V
T
j
=25
℃
, I
S
=-2.6A, V
GS
=0V
Min. Typ. Max. Units
-
-
-
-
Continuous Source Current ( Body Diode )
Forward On Voltage
2
-1.67
-1.2
A
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 135
℃
/W when mounted on Min. copper pad.
±
20V
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| AP4503AGEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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