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參數(shù)資料
| 型號： | AP4501GSD |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 106K |
| 代理商： | AP4501GSD |
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=7A
-
-
27
m
Ω
V
GS
=4.5V, I
D
=5A
-
-
50
m
Ω
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
I
DSS
Forward Transconductance
V
DS
=10V, I
D
=7A
-
12
-
S
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=7A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=15
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
-
-
-
-
-
-
-
-
9
2
5
6
5
19
25
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
13
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
4
-
ns
645
150
95
800
-
-
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=7A, V
GS
=0V,
dI/dt=100A/μs
Min. Typ. Max. Units
-
-
-
16
-
10
Forward On Voltage
2
Reverse Recovery Time
2
1.2
-
-
V
ns
nC
Reverse Recovery Charge
AP4501GSD
±
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4501M | N AND P-CHANNEL ENHANCEMENT |
| AP4501SD | 30V N-Channel PowerTrench MOSFET |
| AP4501SSD | N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4511GD | 30V N-Channel PowerTrench MOSFET |
| AP4511GH | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4501M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT |
| AP4501SD | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4501SSD | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4502AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP4502GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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