參數(shù)資料
型號(hào): AP4417GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 15 A, 35 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/4頁
文件大?。?/td> 72K
代理商: AP4417GH
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP4417GH/J
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
0
2
4
6
8
10
Q
G
, Total Gate Charge (nC)
-
G
V
DS
=-30V
I
D
=-8A
10
100
1000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0
10
20
30
0
2
4
6
8
-V
GS
, Gate-to-Source Voltage (V)
-
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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