參數(shù)資料
型號: AP4417GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 15 A, 35 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 3/4頁
文件大?。?/td> 72K
代理商: AP4417GH
AP4417GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
0
15
30
45
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
C
=25
o
C
V
G
=-3.0V
-10V
-7.0V
-5.0V
-4.5V
50
80
110
140
170
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-8A
T
C
=25
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=-10A
V
G
=-10V
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
4
8
12
0
0.4
0.8
1.2
1.6
-V
SD
, Source-to-Drain Voltage (V)
-
S
(
T
j
=25
o
C
T
j
=150
o
C
0
7
14
21
28
35
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
C
=150
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
=-3.0V
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