參數(shù)資料
型號(hào): AP4419GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 25 A, 35 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大小: 72K
代理商: AP4419GH
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
BV
DSS
R
DS(ON)
I
D
-35V
38m
Ω
-25A
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
I
D
@T
C
=100
I
DM
P
D
@T
C
=25
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
3.6
110
Units
/W
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
-55 to 150
34.7
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
-16
-70
200428051-1/4
AP4419GH/J
Rating
-35
±20
-25
0.28
Pb Free Plating Product
G
D
S
GDS
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.
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