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參數(shù)資料
| 型號： | AP4407M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | AP4407M |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP4407M
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
18
Q
G
, Total Gate Charge (nC)
-
G
I
D
= -10A
V
DS
= -24V
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MH
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 125
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
℃
℃
/W
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
100us
1ms
10ms
100ms
1s
10s
DC
T
A
=25
o
C
Single Pulse
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PDF描述 |
|---|---|
| AP4407P | P-CHANNEL ENHANCEMENT MODE |
| AP4407S | P-CHANNEL ENHANCEMENT MODE |
| AP4409GEM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410M | N-CHANNEL ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4407P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4407S | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4409AGEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4409GEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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