參數(shù)資料
型號(hào): AP4409GM
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: P溝道增強(qiáng)型功率MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 81K
代理商: AP4409GM
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
-35V
10m
Ω
-13A
Low On-resistance
Fast Switching Characteristic
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
50
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
201104041
AP4409GM
Rating
-35
±25
-13
-10.3
-50
2.5
0.02
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Pb Free Plating Product
Thermal Data
Parameter
-55 to 150
-55 to 150
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S
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